0.25 µm Power pHEMT Technology 6
  – 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent.

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air.

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To si.

CHA6518

CHA6550-98F

CHA6550-QXG

CHA6551-99F

CHA6552-QJG

CHA6558-99F

CHA6005-99F

CHA6005-QEG

CHA6015-99F

CHA6042

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts