CHA6517 Datasheet, United Monolithic Semiconductors

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CHA6517 Features and benefits

0.25 µm Power pHEMT Technology 6
– 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent.

CHA6517 Application

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air.

CHA6517 Description

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To si.

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